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Output light power of InGaN-based violet laser diodes improved by using a  u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1"  ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label>  <p>Project supported by the ...
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...

GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths |  Science
GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths | Science

PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD  System | Semantic Scholar
PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar

BluGlass Announces Entry into GaN Laser Diode Business
BluGlass Announces Entry into GaN Laser Diode Business

Smart-cut-like laser slicing of GaN substrate using its own nitrogen |  Scientific Reports
Smart-cut-like laser slicing of GaN substrate using its own nitrogen | Scientific Reports

Role of dislocations in nitride laser diodes with different indium content  | Scientific Reports
Role of dislocations in nitride laser diodes with different indium content | Scientific Reports

High efficient GaN-based laser diodes with tunnel junction: Applied Physics  Letters: Vol 103, No 4
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4

Nanomaterials | Free Full-Text | Narrow-Linewidth GaN-on-Si Laser Diode  with Slot Gratings
Nanomaterials | Free Full-Text | Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by  plasma-assisted molecular beam epitaxy - Advances in Engineering
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering

KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced  from Silicon Working Substrate | News | Newsroom | KYOCERA
KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | News | Newsroom | KYOCERA

A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN:  Applied Physics Letters: Vol 107, No 15
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15

a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... |  Download Scientific Diagram
a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram

Group III-nitride lasers: a materials perspective - ScienceDirect
Group III-nitride lasers: a materials perspective - ScienceDirect

Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... |  Download Scientific Diagram
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram

Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut
Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser  diodes with a reduction of carrier loss in the waveguide layers: Journal of  Applied Physics: Vol 130, No 17
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17

Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics
Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics

InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD

Semiconductor Today features "Semi-polar indium gallium nitride laser  diode/waveguide photodiode combo" | CEMSE | Computer, Electrical and  Mathematical Sciences and Engineering
Semiconductor Today features "Semi-polar indium gallium nitride laser diode/waveguide photodiode combo" | CEMSE | Computer, Electrical and Mathematical Sciences and Engineering

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting  Diode Chips | ACS Applied Electronic Materials
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials

ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE  Times Asia
ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE Times Asia

Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power  Under Continuous-Wave Operation | Semantic Scholar
Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar

BluGlass — Brighter future, lower temperature - Edison Group
BluGlass — Brighter future, lower temperature - Edison Group